专用集成电路与系统国家重点实验室
讲座信息

litho tech trend for sub-10nm nodes...

报告人:Kafai Lai(IBM T.J. Watson Research center)
时 间:2016年3月16日周三上午10:00-12:00
地 点:邯郸校区微电子学楼B213室

Abstract
Semiconductor scaling has been moving at the fast pace predicted by the self-fulfilling Moore’s Law. IC Pattern dimension scaling traditionally was gated by physical advances, such as wavelength and numerical aperture of lens, as well as computational novelty as in modeling, RET and mask decomposition, OPC, SMO, etc. Recently material-driven scaling, using Direct Self-Assembly (DSA) provides an alternative path for scaling. In this talk we will review the main challenges and prospects of using DSA in real manufacturing via a Design Technology Co-optimization framework specific to DSA..

Biography
Kafai Lai holds B.Sc.(Hons) in EE from the University of Hong Kong, China, M.Sc. and Ph.D. in EE from the University of Texas at Austin, USA. Since then he has been working on Lithography R/D for 20 years and currently in the IBM T.J. Watson Research center. He has worked on optical imaging modeling, lens characterization and exposure tooling analysis, OPC model, RET, Source Mask optimization, and Design Technology Co-Optimization and most recently Directed Self-Assembly Lithography in mainstream. He is also the chair of the 2012-2015 SPIE Optical Microlithography Conference and has been a member of the technical program committee & short course(s) instructor of the Conference since 2005. He also served as the symposium chair for the CSTIC conference in Shanghai since 2009. Dr. Lai serves as editor in the Proceedings of SPIE, IEEE transactions, ECS transactions, JM3, Journal of Advanced Optical Technologies, etc. as well as the Fellow member selection committee for OSA. Based on his pioneer work on extending optical lithography and source mask optimization, he was appointed Fellow of OSA, Fellow of SPIE and Senior Members of IEEE.

 
 
 
 

 

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