专用集成电路与系统国家重点实验室
讲座信息

Towards Large-Scale Terahertz Microsystems—
An Emerging Wave Pushed by High-Power On-Chip Radiation


报告人:Ruonan Han(Massachusetts Institute of Technology)
时 间:2016年3月15日周二下午15:30-16:30
地 点:张江校区微电子楼389室

Abstract
Research in the terahertz regime has experienced a few rounds of waves driven alternatively between new application opportunities and key enabling hardware technolgies. Since the 0.17-THz spark gap oscillator in 1923, early THz sources had enabled fundamental physic studies in THz and inter-stellar dust spectroscopy. The needs from later demonstrations, such as non-ionizing imaging and point-to-point communication, in return motivated the development of THz quantum cascade laser, III-V semiconductor components, etc. During the past decade, integrated circuits in silicon has witnessed a rapid increase in operation frequency, leading to an interesting contention on whether these low-cost chips could revolutionize the future sensing and communication equipment. Fortunately, skeptics are greatly eased by the dramatic improvement of the performance in silicon THz sources: the radiated power has increased by five orders of magnitude from the first source (2008) to our latest radiator array (2015). The research area is now calling for a new wave of applications to move forward.
In this talk, I will first introduce our efforts across device engineering, nonlinear theories and circuit-electromagnetics integration, in order to push the fundamental limits of silicon devices. By synthesizing multi-mode waves inside a compact electromagnetic structure, our circuits not only maximize the device efficacy, but also perform multiple functions simultaneously. Using such approach, a 320-GHz SiGe transmitter generates a record 3.3-mW radiated power and for the first time demonstrates fully-integrated phase-locking capability in silicon THz radiators. Inside a highly scalable 2D radiation mesh, we will also show how the above technologies are applied for high-power radiation at 1 THz. Next, I will present the new opportunities enabled by building large-scale THz microsystems. This will be illustrated by a prototype of a fully-integrated THz imaging chipset with heterodyne detection and digital beam forming (a work in collaboration with Cornell University and STMicroelectronics). I will then introduce our current progress in silicon microsystems for rapid gas spectroscopy, frequency metrology, and inter-chip high-speed data links. Our other works, such as THz CMOS pulse generator and Schottky-diode focal-plane array, will also be briefly described.

Biography
Professor Ruonan Han received his Ph.D. degree in electrical and computer engineering from Cornell University in 2014. Prior to that, he received his B.Sc. degree in microelectronics from Fudan University in 2007 and M.Sc. degree in electrical engineering from the University of Florida in 2009. He worked as a summer intern at Rambus Inc. in 2012. In 2014, he was appointed as an assistant professor by the Department of Electrical Engineering and Computer Science at Massachusetts Institute of Technology. He is also a core faculty member in the Microsystem Technology Laboratories at MIT.
The research of Prof. Han has focused on millimeter-wave and terahertz integrated circuits and microsystems. His group aims to revolutionize the sensing technologies in biomedical diagnosis, homeland security, and industrial quality control. His research also targets at key challenges from the next-generation wireless/wireline communications. Prof. Han was awarded the E. E. Landsman (1958) Career Development Chair Professorship in 2014. He is also the recipient of the IEEE Solid-State Circuits Society (SSCS) Pre-Doctoral Achievement Award, the IEEE Microwave Theory and Tech. Society (MTT-S) Graduate Fellowship Award, the Best Student Paper Award (2nd) at 2012 IEEE RFIC symposium, the ECE Innovation Award and the Director’s Best Thesis Award at Cornell University.

 
 
 
 

 

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