专用集成电路与系统国家重点实验室学术报告:
“Applications of scanning transmission electron microscopy and density functional theory in two-dimension materials”

报告人:Dr. Lin Junhao (Oak Ridge National Laboratory)
时  间:9月9日 9:30-10:30
地  点:复旦大学微电子学楼B213室

Abstract
The recent development in aberration corrected scanning transmission electron microscope (STEM) has pushed the limit of spatial resolution to discrete atoms. Meanwhile, the electron beam in a STEM can be used to controllably modify the structure of a material and simultaneously provide atomic-scale images of the dynamical processes that occur, leading to a precise fabrication of ultrafine structures within the materials. With the combination of the first-principle density functional theory (DFT), the properties of these as-fabricated nanostructures can be further predicted and explained. In this talk, I’m going to discuss some of the recent results on the application of this combined technique to various two-dimensional transition-metal dichalcogenides (TMDC) monolayers. Examples will be given as the controllably fabrication of triangular inversion domains and ultrasmall conducting interconnects within the TMDC monolayers [1, 2].

[1] Lin J, et al., “Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers”, Nature Nanotechnology, 9, 436 (2014).
[2] Lin J, et al., “Vacancy-induced growth of inversion domains in transition-metal dichalcogenide monolayer: an atomic view of defect dynamics”, in preparation, (2014).

Contact Information: 周鹏 教授(pengzhou@fudan.edu.cn)
 
 
 
 

 

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