讲座信息
Silicon carbide based non-volatile resistive memories

报告人:
英国南艾普顿大学姜柳笛教授

报告时间:
12月11日(周三)下午15:00 - 16:00

报告地点:
微电子楼B213.

Abstract:
Memory devices are the cornerstone of modern information technology. Despite of strong demands for continuous scaling down of memory devices to improve memory capacities and performance, classical CMOS scaling of current transistor-based random access memories (RAM) and flash memories will run into serious limitation in the near future due to the intrinsic performance issues associated with nano-scale transistors (e.g. reduced channel length and dielectric isolation etc.). Thus, the latest (2011) International Technology Roadmap for Semiconductors (ITRS) has called for a new generation of non-volatile memory devices to be developed with a view to keeping pace with the exponential growing memory demand of the information society. Resistive switching devices have been recognized as one of the most promising solutions as they offer the best scaling potential, ease of fabrication as well as excellent performance in both on and off stages. Despite a recent surge of research and some promising results in this rapidly developing field, clear winners for RMs are yet to be found. This is mainly because the key functions of resistive memories (RMs) (e.g. on/off ratio, data retention etc.) are strongly dependant on the material properties of the solid electrolytes as well as the design configuration of devices, presenting a major cross-disciplinary challenge.

In this talk, I will give a brief introduction of RMs, followed by presenting SiC based RMs as one of the recent development in my group. All possible non-volatile switching modes including bipolar, unipolar, nonpolar have been obtained in our devices with ultra-high switching ON/OFF ratios as well as excellent retention performance, further suggesting the versatility and potential of these SiC based RMs.

If time allows, I will also briefly present another research area in my group, as carbon nanotube (CNT)/Au composite surfaces for electrical contact application in future MEMS switches. These novel switches are aimed for low force, low current applications in eg. RF telecom, testing instrumentations etc.

简历

姜柳笛博士
现任英国南安普顿大学工程与环境学院副教授,博士生导师.姜柳笛博1998年获中科院固体物理研究所理学硕士, 2002年获英国邓迪大学理学博士. 自2001年至今,她先后在英国爱丁堡大学苏格兰微电子中心, 荷兰代尔夫特理工大学, 英国南安普顿大学长期从事微纳米材料及微纳米机电系统(MEMS/NEMS)方面的研究以及生物医学传感器方面的研究. 姜柳笛博士带领的科研小组成功地研究了并把世界领先的微纳米机电传感系统运用到实际当中, 在薄膜材料、纳米材料、微纳米机电系统的设计、加工及应用等领域取得突破性进展,这些突破对生物医学、电子器件、航天航空等相关领域具有深远的影响,得到国际同行的广泛认可。多次得到英国战略技术发展局、IEEE 等部门的嘉奖,2010年被英国物理协会授予资深物理学家称号(Chartered Physicist)。
个人网页:
https://www.southampton.ac.uk/engineering/about/staff/ldjiang.page

 
 
 
 

 

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