专用集成电路与系统国家重点实验室
系列讲座之十七

题  目:EDA in Next Generation Lithography
报告人:Hongbo Zhang (Senior Research and Development Engineer in Silicon Engineering Group, Synopsys Inc.)
时  间:2012年12月26日上午9:30-10:30
地  点:张江校区微电子楼369室

Abstract
Next generation lithography (NGL) is a brand new terminology containing a wide range of concepts. Technically, any processing techniques after 32nm technology node, where single printing ArF immersion (193nm) is not enough, could be called NGL, which covers multiple patterning techniques, extreme ultraviolet (EUV), E-beam, direct self-assembly (DSA) or etc. All those different techniques call for help from EDA for a solution, optimization or efficiency. In this talk, Dr. Zhang will majorly talk about the developing trend in the EDA for the current state-of-the-art processing techniques and introduce his contributions in this research area.

Biography
  Dr. Hongbo Zhang, received his B.S. degree in Electrical & Information Engineering from Mixed Class, Zhejiang University, China in 2005, and M.S. degree in Circuit and System from Institute of VLSI Design, Zhejiang University, China, in 2007. He received his Ph.D.degree in the departmet of Electrical and Computer Engineering from University of Illinois at Urbana-Champaign in 2012, supervised by Prof. Martin D.F. Wong.
  He is currently a Senior Research and Development Engineer in Silicon Engineering Group, Synopsys Inc. His research interests cover physical design, lithography-aware design automation, high performance/low power circuit design and thermal-aware design optimization. He has published over 30 technical papers. He has won the best paper award in DAC 2012 and best paper award normination in ICCAD 2012.

 
 
 
 

 

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