专用集成电路与系统国家重点实验室
系列讲座之十八

题  目:Thin Film Transistors Based on Carbon Nanotubes and Composite
报告人:Dr. Zhi-Bin ZHANG (Researcher, project leader in “Flexible electronics”, Solid State Slectronics, Department of engineering sciences, Uppsala University)
时  间:2011年12月20日周二上午10:00-11:00
地  点:邯郸校区净化楼B213室

Abstract
This talk briefly introduces the research activities in flexible electronics in the division of Solid-State Electronics, Uppsala University, and subsequently focuses on field-effect transistors with carbon nanotube networks and composites as channel materials in the perspectives of processing development and device characterization. The use of carbon nanotubes network as channel material shows appreciable difference in gate capacitance and current scaling behavior from the traditional parallel-plate capacitor model. A comprehensive procedure is established for correct mobility extraction for nanotube networks. With composites as channel material, i.e., carbon nanotube networks imbedded in conducting polymers, hysteresis-free transistors are readily realized with carrier mobility >10cm2v-1s-1. They simultaneously exhibit substantially-enhanced air- and operational stabilities. The traditional parallel-plate capacitor model is a good approximation for mobility extraction. The combination of carbon nanotubes and conducting polymers renders significantly enhanced performances, improved reliabilities and the use of facile manufacturing from solution for a variety of application in flexible electronic devices fabricated on plastics for instance.

 
 
 
 

 

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