学术报告 

Myth and facts in the formation of ultrathin metal silicide films

Prof. Shi-Li Zhang
Division of Solid-State Electronics, The Ångström Laboratory
Uppsala University, Sweden
shili.zhang@angstrom.uu.se

 

ABSTRACT

This talk will focus on recent advancements in formation of ultrathin Ni1-xPtx silicide films.  The results shown are extracted from our recent publications, with reference to previous publications by others.  The talk with begin with discussions of the silicide formation in Intel’s 32-nm CMOS technology where n- and p-MOSFETs are obviously contacted by different silicides despite the use of Ni (and most likely with Pt addition).  Attention will then be directed to CMOS technology nodes beyond 22 nm where silicide films much thinner than 10 nm are required according to the Roadmap.  With a brief overview of the past success in using metal silicides for various CMOS technologies, it becomes immediately clear that control of silicide formation in sub-10 nm regime is a foremost urgent issue especially for devices fabricated on UTB/ETB-SOI substrates or with nanowire-Fins.  Our recent results show that both initial metal thickness and Pt fraction in the as-deposited Ni1-xPtx films are critical parameters determining the resultant silicide films in terms of phase formation, film thickness, specific resistivity, interfacial morphology and morphological stability.  A novel process is emerging for a controllable formation of Ni1-xPtx silicide films below 6 nm in thickness.

 

地点:邯郸校区微电子楼B213会议室

时间201093日上午9:30-11:30

 
 
 
 

 

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