重要讲座通知

 

 

演讲人:诺贝尔奖得主J. G. Bednorz博士

英特尔院士Robert Chau 博士

时间:2009320日(周五)下午2:154:15

地点:复旦大学张江校区行政楼一楼小报告厅

 

 

High Tc Superconductivity - a Discovery and its Impact

 

J. G. Bednorz

Winner of Nobel Prize in Physics 1987

IBM Research, Zurich Research Laboratory

8803 Rüschlikon, Switzerland

 

Abstract:

 

The research on insulating oxides with a particular crystal structure (perovskites) had for decades been a traditional field at the IBM Zurich Research Laboratory (ZRL). It was in 1983 when the idea for a radically new approach, to search for superconductivity in these materials emerged. The search was guided by a simple model and intuition, and after three years of uncertainty culminated in the discovery of layered copper oxides with surprisingly high superconducting transition temperatures (Tc). I will describe personal experiences made during this time and discuss decisive moments as well as the environment that made this breakthrough possible. The discovery led to an intensive research effort, with the discovery of a series of new copper oxide phases and rapidly increasing transition temperatures. This also raised the level of expectations concerning the timescale for the realization of practical applications. Because of their specific crystal structure, however, the new superconductors exhibited very unusual properties, which experts regarded as major obstacles for most of the applications envisaged. A concentrated, worldwide scientific effort, characterized by efficient international collaborations, has over the past two decades provided deep insight into the basic materials properties and led to impressive progress in many segments of powerful superconductor applications.

 

Bio:

 

Born on May 16, 1950, in Neuenkirchen,

North-Rhine Westphalia, Germany

 

M.S. Crystallography, University of Munster, Germany

 

Ph.D. Solid State Physics, Laboratory of Solid State Physics, 

ETH Zurich, Switzerland

 

Research Staff Member, IBM Zurich Research Laboratory, 

Rueschlikon, Switzerland

 

Nobel Prize in Physics 1987 (co-shared with K. Alex Müller)

for the discovery of high-Tc superconductivity in a new class of compounds

 

Distinguished Order of Merit with Star and Shoulder Band of the German Federal Republic 

(“Grosses Bundesverdienstkreuz mit Stern und Schulterband”)

 

Current Activities

His research activities in solid state physics and material science concentrate on the development of new complex oxide compounds and their specific modification for possible implementation in microelectronic components.  A special focus lies on the behavior of thin epitaxial layers, in particular metal-insulator-metal heterostructures in strong electric fields. This work led to the discovery of a current driven insulator metal transition and resistive switching effects in perovskite oxides which offers an interesting opportunity to use these materials for applications as computer memory elements.

 

External Honors:

Marcel-Benoist-Prize, Switzerland

13th Fritz London Memorial Award, University of California, Los Angeles

Dannie Heinemann Prize, Academy of Sciences, Göttingen, Germany

Robert Wichard-Pohl Prize, German Physical Society

Viktor Moritz Goldschmidt Prize, German Mineralogical Society

Otto-Klung Prize, Free University, Berlin, Germany

The Ross Coffin Purdy Award, American Ceramic Society

Hewlett-Packard Europhysics Prize

APS International Prize for New Materials Research, American Physical Society

Minnie Rosen Award, Ross University, New York

Distinguished Member of the Academy of Ceramics

Aldo Villa Prize for Special Contributions to Science and Technology of Ceramic Materials,
                         Italian Ceramic Society      

Fellow of the American Physical Society

Honorary Member of the American Ceramic Society

Honorary Fellow of the Fudan University, Shanghai, China

Honorary Fellow of the Institute of Physics, Singapore

Dr. honoris causa, University of Regensburg, Germany

Dr. honoris causa, University of Salzburg, Austria

Dr. honoris causa, University of Silesia, Katowice, Poland

Dr. honoris causa, University of Tbilisi, Georgia 

 

 

Challenges and Opportunities of Emerging Nanotechnology for

Future VLSI Nanoelectronics

 

Dr. Robert Chau

Intel Senior Fellow, IEEE Fellow

Director of Transistor Research and Nanotechnology

Intel Corporation

 

Abstract:

 

This presentation will first highlight some of the most recent silicon innovations made for advanced CMOS transistors in the nanotechnology era for high-speed and energy-efficient VLSI digital applications. Through these Si nanotechnologies, it is expected that CMOS scaling and the improved performance trend will extend and continue well into the next decade. In addition, there has been good progress made in the research of non-silicon materials and their integration onto large silicon wafers to enhance device performance, reduce power and increase functionality. For instance, III-V compound semiconductors and their integration onto silicon are currently in research for future high speed and ultra-low power digital CMOS applications. Emerging nanotechnologies such as carbon nanotubes, semiconductor nanowires and graphene, as well as new areas such as non-charge based devices and spintronics, are being explored for future computation and data storage applications. Furthermore, some of these nano-devices are finding potential applications in other important areas such as health and the environment, energy conversion and storage, consumer electronics, communication devices, sensors and so on. The research progress of these emerging nanotechnologies and nanoelectronic devices, and the challenges and opportunities of combining top-down and bottom-up nanoelectronics, will be discussed in this presentation.

 

 

Bio:

 

Dr. Robert Chau is an Intel Senior Fellow and the Director of Transistor Research and Nanotechnology at Intel Corporation. He is responsible for directing research and development in advanced transistors, process modules and technologies, and silicon integrated processes for microprocessor applications. He is also responsible for leading research efforts in emerging nanotechnologies for future nanoelectronics applications.

 

Dr. Chau joined Intel in 1989, became an Intel Fellow in 2000 and an Intel Senior Fellow in 2005. During his career at Intel he invented and developed many transistor innovations and process technologies, including the ultra-thin 1.2nm nitrided gate oxide, e-SiGe strained silicon and high-K/metal-gate, which have been implemented in various Intel’s high-volume manufacturing processes and microprocessor products. He has been granted more than 170 issued United States patents for his inventions.

 

Dr. Chau has received 7 Intel Achievement Awards and 13 Intel Logic Technology Development Division Recognition Awards. He was the co-recipient of the 2008 SEMI Award for North America for the development of Intel’s 90nm strained silicon technology, and the 2008 EDN “Innovator of the Year” Award for the development of Intel’s 45nm high-K/metal-gate technology. He has been elected an IEEE Fellow.

 

 
 
 
 

 

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