前沿讲座

时间:2008年3月3日上午9:30——11:30
地点:复旦大学邯郸校区物理楼138会议室

Fluorine Plasma Ion Implantation Technology: a Robust Approach to Modulating Threshold Voltage and Potential in III-nitride Devices

Prof. Kevin Jing Chen (陈敬)

Department of Electronic and Computer Engineering
The Hong Kong University of Science and Technology
Clear Water Bay, Kowloon, Hong Kong
Email: eekjchen@ust.hk

Abstract: Wide-bandgap gallium nitride (GaN) and related compound semiconductor materials possess attractive characteristics including high breakdown voltage, high polarization-induced carrier density and high electron saturation velocity. Rapid progress has been made in material growth and device processing technologies during the last decade. Meanwhile, there remain technical challenges to overcome. For example, unlike the silicon MOSFET technology, in which the devices’ threshold voltage can be locally adjusted in the processing stage by ion implantation, the threshold voltage of AlGaN/GaN high electron mobility transistors (HEMTs) is mainly determined in the material growth stage and exhibit negative values. Recently, a robust approach to modulating the local potential and carrier concentration in AlGaN/GaN HEMTs was developed based on the fluorine plasma ion implantation (or treatment) technology. The most significant development based on this technology is the demonstration of self-aligned enhancement-mode (or normally-off) AlGaN/GaN HEMTs with low on-resistance.

In this presentation, I will give a comprehensive overview of the fluorine plasma ion implantation technology. Underlying physical mechanisms will be discussed, together with detailed dc and RF device characteristics. Examples of extending this technology to various device and circuit applications including high temperature digital ICs and integrated switch-mode power supply will be illustrated. The reliability issues related to the fluorine plasma ion implantation will be discussed based on results from stress test and molecular dynamics simulation.

Biography: Dr Chen received the B.S. degree from Peking University in 1988 and the PhD degree from University of Maryland, College Park, USA in 1993. From 1994 to 1995, he was a research engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). From 1996 to 1998, he was an assistant professor in the Department of Electronic Engineering, City University of Hong Kong. Dr. Chen then joined the wireless semiconductor division of Agilent Technologies, Inc., in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. Dr. Chen joined Hong Kong University of Science and Technology in Nov. 2000, where he is currently an associate professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide bandgap III-nitride devices, silicon-based microwave passive components and interconnects technology, GaN-based MEMS devices, and multi-band microwave filters design. Currently, his group is focused on developing GaN device technologies for power electronics and high-temperature electronics applications. Prof. Chen has authored or co-authored more than 180 publications in international technical journals and conference proceedings. Prof. Chen is a senior member of IEEE and a distinguished lecturer of IEEE Electron Device Society.

 
 
 
 

 

Copyright© 2003-2018 复旦大学微电子学院
联系我们