第一届复旦纳米电子器件前沿报告会

20081025

 

1st Fudan Workshop on the Frontiers of Nano-Electronic Devices

Oct. 25th, 2008

 

 

由于纳米电子学的飞速发展和纳米电子器件未来潜在的重大作用,复旦大学诚邀四位纳米电子器件领域的国际知名专家为复旦师生以及其他科研院所、企业的相关人员提供一场内容丰富的纳米电子器件前沿报告会。

Research on nano-electronics is fast growing and nano-electronic devices are playing an increasingly important role. Fudan University has invited four world-renowned experts in the field to present an insightful seminar on the frontiers of nano-electronic devices. You are cordially welcome to the workshop.

 

时间:200810259:30——17:15

地点:邯郸路220号复旦大学逸夫科技楼多功能厅(二楼)

 

本次报告会提供免费会议材料(数量有限,仅提供给预先报名的与会人员),欢迎报名参加,请于1015前将回执以email方式寄到jtsheng@fudan.edu.cn

Free workshop proceedings will be offered to those who have registered in advance. Please send the reply to jtsheng@fudan.edu.cn by Oct.15, 2008.

 

 

Program:

 

9:30-11:30    “Towards Ultimate CMOS with Performance Boosters”

 

Professor Yeo Yee Chia

ECE Department, National University of Singapore

 

 

11:30-14:00    Lunch

 

14:00-15:00    “Nonvolatile Flash EEPROMs: An Overview”

 

Professor Souvik Mahapatra

Electrical Engineering Department, Indian Institute of Technology, Bombay, India,

 

 

15:00-16:00    “High- Dielectric Metal-Electrode Innovation for Logic CMOS & Memory Devices”

 

Professor Albert Chin

Electronics Eng. Dept., National Chiao Tung University, Hsinchu, Nano-Electronics Consortium, Taiwan, China

 

16:00 -16:15    break

 

16:15-17:15     “Ni-based FUlly SIlicidation (FUSI) Technology for sub-32nm CMOS Devices”

 

Professor Hongyu Yu

Nanyang Technological University, Singapore

 

 

(Presenter Bios follow)

 

Yeo Yee Chia

 

Yee-Chia Yeo received the B. Eng (first class honors) and M. Eng degrees in Electrical Engineering from the National University of Singapore (NUS), and the M.S. and Ph.D degrees in Electrical Engineering and Computer Sciences from the University of California, Berkeley.

He had worked on optoelectronic devices at the British Telecommunications Laboratories, U.K., and on CMOS technology at Berkeley. In 2001-2003, he worked on exploratory transistor technologies at Taiwan Semiconductor Manufacturing Company (TSMC). He is currently an Assistant Professor of Electrical and Computer Engineering at NUS, Singapore, and a Research Program Manager at the Agency for Science, Technology, and Research (A*STAR), Singapore. He leads research efforts in strained transistor technologies and sub-30 nm device work at NUS, and manages a Nanoelectronics Research Program at A*STAR. He served on the IEDM Sub-Committee on CMOS Devices in 2005-2006. He has authored or co-authored more than 270 journal and conference papers, and a book chapter. He has 72 U.S. Patents.

 

He received the 1995 IEE Prize from the Institution of Electrical Engineers, U.K,  the 1996 Lee Kuan Yew Gold Medal, the 1996 Institution of Engineers Singapore Gold Medal, 1997-2001 NUS Overseas Graduate Scholarship Award, the 2001 IEEE Electron Devices Society Graduate Student Fellowship Award, the 2002 IEEE Paul Rappaport Award, and 2003 TSMC Invention Awards. In 2006, he received the Singapore Young Scientist Award and the Singapore Youth Award in Science and Technology.  In 2008, he received a National Research Foundation Fellowship and a NUS Young Researcher Award.

 

 

 

Souvik Mahapatra

 

Souvik Mahapatra received his PhD in Electrical Engineering from the Indian Institute of Technology (IIT) Bombay, India, in 1999. He was at Bell Laboratories, Murray Hill, NJ, USA during 2000-2001. Since 2002 he is with the Department of Electrical Engineering, IIT Bombay, India, and presently holds the position of Associate Professor. His research interests are in the area of characterization, modeling and simulation of CMOS and Flash memory devices, and device reliability. He has published more than 70 papers in peer reviewed journals and conferences, delivered invited talks in leading international conferences including the IEEE IEDM, was a tutorial speaker at IEEE IRPS, and acted as a reviewer of several international journals and conferences. He is a distinguished lecturer and senior member of the IEEE.

 

 

Albert Chin

 

Albert Chin received the Ph.D. from the Department of Electrical Engineering, University of Michigan, Ann Arbor. He was with AT&T-Bell Labs, General Electric- Electronic Lab, and the Texas Instruments. He is a Professor at National Chiao Tung University and was with the Si Nano Device Lab (SNDL), National University of Singapore. He is a pioneer in high- gate dielectric and metal-gate research since 1998. He invented the Ge-On-Insulator (GOI) CMOS, resonant cavity photo-detector, high-trapping layer non-volatile memory, and nano-crystallized high-DRAM capacitors. He has published more than 300 technical papers and presentations, where 9 co-authored papers are recorded as Highly Cited Papers (less than 1% of ESI total citation in Engineering). His inventions are also listed in the International Technology Roadmap for Semiconductors. He has given invited talks at the International Electron Devices Meeting (IEDM) and other conferences in the US, Europe, Japan, Korea (i.e., Samsung Electronics), etc. Dr. Chin is currently the Subcommittee Chair (2008) of IEDM.

 

 

Yu HongYu

 

Yu HongYu obtained his B.Eng. degree from Tsinghua University, Beijing in 1999. In 2001, he received his M.ASc. degree from Uni. of Toronto on the work of organic light emitting devices. From 01/2001 to 06/2004, he was associated with Silicon Nano Device Lab of NUS for his PhD degree, working on the advanced gate stack for nanoscale CMOS technology. In NUS, he was awarded with a NUS President Graduate Fellowship and later an IEEE Electron Device Society Graduate Fellowship.  From 06/2004 to 01/2008, he was with IMEC, Leuven, Belgium, as a senior researcher in the Si process and device technology division. He joined school of EEE at NTU starting from Feb./2008, awarded with the inaugural Nanyang Assistant Professorship.  He has authored or co-authored > 120 publications in the top-tied international journals and conferences, including ~20 IEDM/VLSI conference papers, >30 IEEE electron device letters, and several invited talks. In 2007, along with 3 other papers respectively from IBM, Toshiba, and SamSung, his 1st authored paper was selected as the highlight paper in Tech. Sym. VLSI held in Kyoto, Japan (ranked top 2% among all the submissions). His journal papers have been cited by >580 times, based on SCI (with an H-factor of 15).  In addition, he has published >15 USA/EU patents.  His current research interests focus on emerging Si-based Nano Electronic Device, e.g. novel Non-Volatile Memory; sub-22nm CMOS devices; SiGe based Nano-wire devices; Si based Photovoltaic devices; and Si photonics.

 

 

 

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第一届复旦纳米电子器件前沿报告会

20081025

 

1st Fudan Workshop on the Frontiers of Nano-Electronic Devices

Oct. 25th, 2008

 

 

 

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Please RSVP by October 15th to:

 

School of Microelectronics, Fudan University

Attention:  Lizzy Sheng

Phone:  (021) 65643438

Fax:   (021) 65643449

Email:  jtsheng@fudan.edu.cn

 
 
 
 

 

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