前沿讲座

时间:2007年1月18日下午2:00 – 4:30
地点:邯郸校区净化楼B213会议室

Part 1: New Opportunities for Silicon RF Microelectronics
时间:2007年1月18日(周四)下午2:00 – 3:15
Lecturer:Prof. dr. John R. Long,Chair, Electronics Research Laboratory Faculty of EEMCS,Delft University of Technology

Abstract:
Circuit design at radio frequencies (RF) in silicon microelectronic technologies has progressed from building small-scale blocks to complete systems-on-a-chip over the past decade, enabling applications such as 3G wireless telephony. It can be argued that the current success of wireless consumer products with mass-market appeal has been made possible by the cost, size and performance advantages of integration onto a silicon chip. New opportunities for wireless devices in consumer products are therefore linked to the further evolution of silicon technologies.
Future advances in wireless technology, such as MEMS to permit higher levels of integration, technologies leading to full-integrated baseband chips, and RF architectures more suited to digital implementations are on the horizon. With recent demonstrations of 300GHz bandwidth transistors on a silicon chip, there will be a desire to exploit new frequency bands for networking people using not only voice, text and images, but with other media in the near future. In addition to these developments, many current activities in the field are aimed at realizing a vision of digital computing and radio communications co-existing on the same slice of silicon. The potential and scientific challenges presented by these developments will be described from a designer’s perspective.

Part 2: Single-Grain Si TFTs and Circuits Fabricated through the micro-Czochralski process
时间:2007年1月18日(周四)下午3:15 – 4:30
Lecturer:R. Ishihara,Delft University of Technology

Abstract:
The presentation reviews an advanced laser crystallization technique which enables a precise location-control of the individual large Si grains with a plastic compatible temperature below 100oC. This method is based on excimer-laser irradiation to a-Si in narrow cavities in SiO2 made with conventional photolithography. Thin film transistors (TFTs) were fabricated inside the single, location-controlled Si grain with a diameter of 6 microns. The field-effect mobility for electrons of the single-grain TFTs was as high as 597cm2/Vs. CMOS inverters are also fabricated inside the location-controlled grain and propagation delay per stage of 3.1 ns was confirmed.  This superior performance suggests that the SG TFTs are promising for future system circuit integration in flexible display and also for 3D integration of ICs.

 
 
 
 

 

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