前沿讲座
Nanoscale MOSFETs Some New Issues and Solutions

 

时间:2006年9月14日(周四)上午9:30 – 11:30
地点:邯郸校区物理楼138会议室

Lecturer:Dr. Kin P. Cheung, Associate Professor, Department of Electrical & Computer Engineering, Rutgers University, USA

Abstract:

The leading edge of advanced integrated circuit production is now at the 65nm technology node with physical gate length less than 30nm. Quantum tunneling across the ultra thin gate dielectric of roughly 1nm thick is causing serious power dissipation issues. The highly leaky gate dielectric is also causing problem in the basic device characterization. High-k dielectric with metal gate is considered necessary for future generation. However, the high-density of charge traps in the high-k layer is a serious issue and is challenging the traditional methods of measurement. The current and future transistors are comparable or smaller in size than the phonon mean-free-path. The high power density dissipated at the drain end of the transistor produces high density of mostly optical phonons. Because of the small size of the transistor, these emitted phonons are ballistic in nature (to the transistor) and is far from thermal equilibrium. Since optical phonons are non propagating, a "hot" spot is formed. The impact of such spot is just beginning to be investigated. In this talk, I will discuss three set of experiments carried out in my laboratory addressing these three problems of nanoscale transistor. I will show a new time-domain method for high-precision CV measurement in the presence of high leakage. I will show a GHz charge pumping experiment and a new cascade trap-filling model to resolve the debate in high-k dielectric defect generation. Finally, I will show the first experimental result on the impact of ballistic phonon on nanoscale transistor stability.

 
 

 

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