讲座信息

 

Seminar 1

HfO2 Gate Dielectrics for future ULSI CMOS Devices - Chanllenges and Problems

Abstract : Based on our recent investigation on HfO2 high-k gate dielectrics, we  review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects : How long HfO2 can be used satisfactorily, assessed from the gate tunneling and scalability ; how thin EOT can be grown technologically ,assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation , assessed by charge trapping  and threshold voltage shift .

 

Seminar 2

Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs

Abstract : Electron mobility in strained Si and Ge ultrathin-body (UTB) MOSFETs with sub-10 nm body thickness Tbody is studied.  An accurate and calibrated physical model that takes the effect of scattering due to optical phonons, acoustic phonons, surface roughness, and interface states into account is used. We found that biaxial tensile strained-Si offers mobility enhancement down to Tbody @ 3nm, below which quantum confinement effect gives the same benefit as strain effects, rendering the application of strain to Si redundant. In Ge channel UTB transistors, electron mobility is found to be highly dependent on surface orientation. Ge<100> and Ge<110> surface have low quantization mass that leads to high susceptibility to surface roughness, resulting in even lower mobility than Si in aggressively scaled UTB. Ge<111> with its higher quantization mass and low density of states mass is highly advantageous to channel mobility for aggressively scaled body. 

 

时  间:2004年9月27日(星期一)
        下午2:00~3:30

地  点:微电子学楼(净化楼)203室

报告人:李名复 教授

报告人简介:

    李名复,新加坡国立大学电机和计算机工程系教授。曾担任中国中科院超晶格和微结构国家实验室学术指导委员会委员、博士生导师。1979、1986、1990年先后作为美国Western Reserve大学、Uni. Of Illinois at Urbana、加州大学Berkeley and Lawrence Berkeley国家实验室的访问学者和访问科学家。李名复教授在国际顶尖学术杂志和会议上发表了250多篇学术论文,多次在国际会议上宣读论文和作特邀报告。出版了2本学术专著,并有多项专利。目前担任中国、日本、加拿大、德国、新加坡等国半导体协会的委员和顾问委员。

    研究领域:深亚微米CMOS器件(高K栅介质和MIM电容、超薄栅氧化层退化和热载流子退化,CMOS器件量子模拟)、半导体材料和器件的缺陷、模拟集成电路设计(RF IC设计和可靠性、低电压工作饱和电抗器和连续时间有源滤波器设计、低电压A/D转换器设计)等。

 

 
 

 

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