研究生前沿报告

 

Topic: Extending Transistor Scaling and Moore's Law with Nano-technology
Time: 10:00 a.m. –11:00 a.m., Sep 16
Place: B213, Building of Microelectronics, Fudan University(净化楼)
Speaker: Dr. Wilman Tsai,
          Program Manager, Technology Manufacturing Group, Intel Corporation

 

Speaker’s Bio:
Key interests for Intel is advanced device science, e.g., high k materials, IIIV/Si, CNT, nanowire, device physics.
Wilman Tsai is currently Program Manager of Technology Manufacturing Group, Intel Corporation, Santa Clara, CA. He manages Strategic Research Group at Intel, focused in the front end devices, and is responsible for external research programs in advanced logics and memory devices for 32 nm node and beyond; include universities, SRC/MARCO and industrial consortia of Sematech and IMEC. He chairs the Emerging Research Device group in Intel's Semiconductor Technology Committee (STC) where he manages over 15 university research programs in charged-based scaling CMOS devices. His research interests include emerging research devices, nanotechnology, and advanced material science. Dr. Tsai serves on advisory committee of SRC, Sematech and IMEC research consortia. Prior to assuming his current responsibilities, Dr. Tsai is the research-in-residence at IMEC, Leuevn, focus on device research on metal-gated high k dielectrics and managed Intel’s advanced mask process technology group in Santa Clara. He obtained his PhD in Chemical Engineering from California Institute of Technology in 1987, prior to joining Intel in 1997, Dr Tsai hold various engineering development and research positions in the semiconductor industries for 10 years in the areas of thin film metallization, plasma etch and photolithography. He is currently a visiting scholar at Stanford University Center of Integrated Systems, and senior member of IEEE, Material Research Society and Electrochemical Society. He holds 6 US Patents and over 80 journal/conference publications.

E-mail address: wilman.tsai@intel.com

 

 

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