Lecturer: Prof. Hideo Sunami

           Research Center for Nanodevices and Systems, Hiroshima University

Time: 3:30 p.m. -- 4:30 p.m. May 28th

Place: 净化楼四楼会议室

Abstract:

1. Introduction of outlines of Research Center for Nanodevices and Systems (RCNS) and the 21st Century
COE of "Nanoelectronics for Terabit Information Processing (NTIP)" in Hiroshima University.

2. Research projects and research fields of professors in RCNS and NTIP.

Bio:

1969 Graduated from Tohoku University

M. S degree under supervision of Prof. Jun-ichi Nishizawa

1969 Joined Central Research Laboratory, Hitachi, Ltd.

1969 through 1998

Mainly in charge of R&D on dynamic RAMs of

From 64 kilobit through 1 gigabit

1975 Invented "trench capacitor DRAM cell"

1998 Joined Hiroshima University

Doing R&D on three-dimensional MOS transistor and

novel silicon optical modulator.

Dr. Sunami won several prizes regarding trench capacitor

DRAM cell he invented.

- 1) Tokyo Governor's Man of Merit for Invention, 1998

- 2) IEEE Fellow, 1998

- 3) Kanto District Significant Invention Award, 1991

- 4) 1991 Cledo Brunetti Award of IEEE

- 5) 1984 Paul Rappaport Award of IEEE

Dr. Sunami is a member of

The IEEE

The Institute of Electronics, Information and Communication Enigineers of Japan

The Japan Society of Applied Physics