朱颢
Associate Professor
School of Microelectronics

Biography
Ph.D. in Electrical Engineering, George Mason University, 2013
M.S. in Physics, Nanjing University, 2010
B.S. in Physics, Nanjing University, 2007

Hao Zhu received the B.S. and M.S. degrees in Physics from Nanjing University, China, in 2007 and 2010 respectively, and the Ph.D. degree in Electrical Engineering from George Mason University, USA, in 2013. Afterwards he worked as a Research Faculty Professor in the Department of Electrical and Computer Engineering at George Mason University. From 2011 to 2015, he was a Guest Scientist at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA. In October 2016, he joined the faculty of Fudan University, where he is currently an Associate Professor of Microelectronics. His current research focuses on the novel low-dimensional semiconductor nanomaterials and devices for various logic, memory, sensing and power applications.

朱颢,复旦大学微电子学院青年研究员。2007年和2010年在南京大学物理学系分别获得学士和硕士学位。2013年12月博士毕业于美国乔治梅森大学电子工程系。随后在乔治梅森大学电子工程系担任研究教授职位。在2011年至2015年间,在美国国家标准与技术研究院从事科研工作。2016年10月,作为青年研究员加入复旦大学微电子学院。目前主要的研究方向包括新型低维材料的生长、材料物性和器件工艺等基础和应用领域。

Research Interests

  1. Two-dimensional materials and devices
  2. Semiconductor nanowire FETs
  3. Topological insulator nanomaterials and devices
  4. Resistive switching, phase-change, and hybrid molecular Flash non-volatile memory

Contact
Microelectronics Bldg, Rm 316
Fudan University
220 Handan Rd
Shanghai 200433
Tel: +86-21-65647395
E-mail: hao_zhu@fudan.edu.cn

 

地址:上海市邯郸路220号
复旦大学微电子学楼316室
电话:+86-21-65647395
邮箱:hao_zhu@fudan.edu.cn

Selected Publications
(*: Corresponding Author)
Book Chapters

  1. Hao Zhu*, Qiliang Li, “Redox-active Molecules for Novel Non-volatile Memory Applications” Chapter in “Redox” Edited by Mohammed Awad Ali Khalid, ISBN 978-953-51-5421-1, Publisher: Intech, In Press.
  2. Hao Zhu*, “Semiconductor Nanowire MOSFETs and Applications” Chapter in “Nanowire” Edited by Khan Maaz, ISBN 978-953-51-5257-6, Publisher: Intech, In Press.

Journal Papers

  1. Jing Xu, Lin Chen, Ya-Wei Dai, Qian Cao, Qing-Qing Sun, Shi-Jin Ding, Hao Zhu, David Wei Zhang, A Two-dimensional Transistor with Boosted Gate Control and Sensing Ability, Science Advances, accepted.
  2. Sheng Xie, Lin Chen, Tian-Bao Zhang, Xin-Ran Nie, Hao Zhu*, Shi-Jin Ding, Qing-Qing Sun, David Wei Zhang, Fast Solid-phase Synthesis of Large-area Few-layer 1T’-MoTe2 Films, Journal of Crystal Growth, 467, 29 (2017).
  3. Xiao Wang, Tian-Bao Zhang, Wen Yang, Hao Zhu*, Lin Chen, Qing-Qing Sun, David Wei Zhang, Improved Integration of Ultra-Thin High-k Dielectrics in Few-Layer MoS2 FET by Remote Forming Gas Plasma Pretreatment, Applied Physics Letters 110, 053110 (2017).
  4. Sheng Yu, Hao Zhu, Kwesi Eshun, Chen Shi, Min Zeng, Kai Jiang, Qiliang Li, Dirac Fermions Induced in Strained Zigzag Phosphrus Nanotubes and Their Applications in Field Effect Transistors, Physical Chemistry Chemical Physics 18, 32521 (2016).
  5. Sheng Yu, Hao Zhu, Kwesi Eshun, Chen Shi, Min Zeng, Qiliang Li, Strain-Engineering the Anisotropic Electrical Conductance in ReS2 Monolayer, Applied Physics Letters 108, 191901 (2016).
  6. Sujitra Pookpanratana, Hao Zhu, Emily G. Bittle, Sean N. Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker, Non-Volatile Memory Devices with Redox-Active Diruthenium Molecular Compound, Journal of Physics: Condensed Matter 28, 094009 (2016).
  7. (Invited Review) Hao Zhu, Qiliang Li, Novel Molecular Non-Volatile Memory: Applications of Redox-Active Molecules, Applied Sciences 6, 7 (2016).
  8. Hao Zhu*, Sujitra J. Pookpanratana, John E. Bonevich, Christina A. Hacker, Sean N. Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications, ACS Applied Materials & Interfaces 7, 27306 (2015).
  9. Sheng Yu, Hao Zhu, Kwesi Eshun, Abbas Arab, Ahmad Badwan, Qiliang Li, A Computational Study of the Electronic Properties of One-Dimensional Armchair Phosphorene Nanotubes, Journal of Applied Physics 118, 164306 (2015).
  10. Sheng Yu, Kwesi Eshun, Hao Zhu, Qiliang Li, Novel Two-Dimensional Mechano-Electric Generators and Sensors Based on Transition Metal Dichalcogenides, Scientific Reports 5, 12854 (2015).
  11. Hui Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David Gundlach, Curt A. Richter, Dimitris E. Ioannou, Qiliang Li, Influence of Metal-MoS2 Interface on MoS2 Transistors Performance: A Comparison of Ag and Ti Contacts, ACS Applied Materials & Interfaces 7, 1180 (2015).
  12. Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li, Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure, Applied Physics Letters 105, 233505 (2014).
  13. Hui Yuan, Ahmad Z. Badwan, Curt A. Richter, Hao Zhu, Oleg Kirillov, Dimitris E. Ioannou, Qiliang Li, Gate Assisted Kelvin Test Structure to Measure the Electron and Hole Flows at the Same Nanowire Contacts, Applied Physics Letters105, 133513 (2014).
  14. Hao Zhu*, John E. Bonevich, Haitao Li, Curt A. Richter, Hui Yuan, Oleg Kirillov, Qiliang Li, Discrete Charge States in Nanowire Flash Memory with Multiple Ta2O5 Charge-Trapping Stacks, Applied Physics Letters 104, 233504 (2014).
  15. Haitao Li, Hao Zhu, Hui Yuan, Lin You, Curt A. Richter, Joseph J. Kopanski, Erhai Zhao, Qiliang Li, SnTe Field Effect Transistors and the Anomalous Electrical Response of Structural Phase Transition,Applied Physics Letters 105, 013503 (2014).
  16. Hao Zhu*, Hui Yuan, Haitao Li, Curt A. Richter, Oleg Kirillov, Dimitris E. Ioannou, Qiliang Li, Design and Fabrication of Ta2O5 Stacks for Discrete Multibit Memory Application, IEEE Transactions on Nanotechnology 12, 1151 (2013).
  17. Hao Zhu, Christina Hacker, Sujitra Pookpanratana, Curt A. Richter, Hui Yuan, Haitao Li, Oleg Kirillov, Dimitrios E. Ioannou, Qiliang Li, Non-Volatile Memory with Self-Assembled Ferrocene Charge Trapping Layer, Applied Physics Letters 103, 053102 (2013).
  18. Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Haitao Li, Abbas Arab, Oleg Kirillov, James E. Maslar, Dimitris E. Ioannou, Qiliang Li, Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors, Scientific Reports 3, 1757 (2013).
  19. Qiliang Li, Hao Zhu, Hui Yuan, Oleg Kirillov, Dimitris E. Ioannou, John Suehle, Curt A. Richter, A Study of Metal Gates on HfO2 Using Si Nanowire Field Effect Transistors as Platform, ECS Transactions 50 (4), 267 (2012).
  20. Hui Yuan, Qiliang Li, Hao Zhu, Haitao Li, Dimitris E. Ioannou, Curt A. Richter, Single-Nanowire CMOS Inverter Based on Ambipolar Si Nanowire FETs, ECS Transactions 50 (6), 151 (2012).
  21. Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, Dimitris E. Ioannou, Curt A. Richter, Self-Aligned Multi-Channel Silicon Nanowire Field-Effect Transistors, Solid-State Electronics 78, 92 (2012).
  22. Hanni Xu, Zhiguo Liu, Yidong Xia, Liang Chen, Hao Zhu, Hongxuan Guo, Jiang Yin, Phase Change Behavior in Ag10Ge15Te75 and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75 Films, Electrochemical and Solid-State Letters14, H99 (2011).
  23. Hao Zhu, Jiang Yin, Yidong Xia, Zhiguo Liu, Ga2Te3 Phase Change Material for Low-Power Phase Change Memory Application, Applied Physics Letters97, 083504 (2010).
  24. Hao Zhu, Kai Chen, Zhongyang Ge, Hanni Xu, Yi Su, Jiang Yin, Yidong Xia, Zhiguo Liu, Binary Semiconductor In2Te3 for the Application of Phase-Change Memory Device, Journal of Materials Science 45, 3569 (2010).

Conference Papers

    • Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, Hyuk-Jae Jang, Hui Yuan, Haitao Li, Abbas Arab, Oleg Kirillov, William A. Kimes, James E. Maslar, Qiliang Li, High performance Bi2Se3 nanowire field-effect transistors, Device Research Conference (DRC), 2013 71st Annual, 161-162 (2013).
    • Qiliang Li, Hao Zhu, Erhai Zhao, Hui Yuan, Dimitris E. Ioannou, Curt A. Richter, Haitao Li, Oleg Kirillov, High performance topological insulator nanowire field-effect transistors, Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of, 1-2 (2013)
    • Hao Zhu, Christina A. Hacker, Sujitra J. Pookpanratana, Curt A. Richter, Qiliang Li, Redox-Active Molecular FLASH Memory to Replace SRAM, Semiconductor Device Research Symposium (ISDRS), 2013 International (2013).
    • Hao Zhu, Qiliang Li, Haitao Li, Hui Yuan, Dimitris Ioannou, Curt A. Richter, Engineering Dielectric Stacks for Charge-Trapping Non-Volatile Memory, PRiME 2012, The Electrochemical Society, 2851 (2012).
    • Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, Dimitris E. Ioannou, Curt A. Richter, Self-aligned multi-channel silicon nanowire field-effect transistors, Semiconductor Device Research Symposium (ISDRS), 2011 International (2011).
 
 
 
 

 

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