周鹏教授,博士生导师。先后获得复旦大学 “卓学计划”人才支持,上海市青年科技启明星、国家自然基金委优秀青年资助。微电子学院先进电子器件研究所副所长,主持“上海市微纳器件与工艺专业技术服务平台”工作。于2000年、2005年分别获复旦大学物理学学士和博士学位。2006-2007年在首尔国立大学Inter-大学半导体高级研究中心任访问学者。主持了国家重大专项子课题、自然科学基金、上海市教委科技创新重点项目、973子课题等12项国家部委科研项目。 出版中英文5本著作章节,在国际一流学术期刊Nano Lett,Advanced Functional Materials,2D Materials, ACS Nano,Carbon, Applied Physics Letters, Small, IEEE Electron Device Letters等发表第一作者及通信作者论文50余篇。其中2007年发表在Applied Physics Letters的研究工作已被SCI他引141次。获得授权中国发明专利6项。所培养学生攻读学位期间获得了国家奖学金、企业奖学金及各类一等奖学金,毕业后进入华为、展讯、AMD及SMIC等国际影响力企业。(2017.2)

 

研究方向:

  1. 新型二维层状半导体电子器件工艺与特性研究;
  2. 下一代CMOS兼容非挥发存储器工作机制与制造技术;

 

通信地址: 上海市邯郸路220号  复旦大学微电子学楼401
电子邮箱:
pengzhou@fudan.edu.cn    电话:021-65642198
欢迎微电子、物理、材料、化学等专业的优秀毕业生加盟共同进步!

 

 

出版著作:

  1. 周 鹏,《半导体存储器概论》,北京邮电大学出版社,ISBN:978-7-5635-3658-0,2013,345千字。
  2. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’,Taylor & Francis Group, ISBN:978-1-4398-4835-7,2011,20千字。本书已被科学出版社引进翻译出版。
  3. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nanoscale Semiconductor Memories: Technology and Applications’,Taylor & Francis Group,ISBN: 978-1-4665-6060-4,2013,20千字。

 

 

部分代表性论文

 

  1. Chunsen Liu, Xiao Yan, Jianlu Wang, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)
  2. Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)
  3. E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)
  4. Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu,Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition(Nanotechnology,27,344002, 2016).
  5. X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*,W. Hu, F.X. Xiu,Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy,(Nano Letters,2015,15(5):3571-3577). (通信作者)(ESI 高引)
  6. E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*,W. Hu, F.X. Xiu,ReS2-based field-effect transistors and photodetectors, (Advanced Functional Materials,25(26):4076-4082,2015). (通信作者)
  7. Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015). (通信作者)
  8. Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,(Scientific Reports ,4(6448),2014). (通信作者)
  9. Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, (Journal of Materials Chemistry C , 2,8042—8046,2014). (通信作者)
  10. Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan,Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang, Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon,62,157-164,2013). (通信作者)
  11. Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, (Journal of Materials Chemistry C , 2,2548-2552,2013). (通信作者)
  12. Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,(Nanoscale Research Letters ,8, (2013), 91(1-5).
  13. Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO (IEEE Transactions on Nanotechnology 11, 1059, 2012)
  14. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories(Applied Physics Letters 100, 063509, 2012) (通信作者)
  15. Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning (Applied Physics Letters 99, 141911, 2011) (通信作者)
  16. Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32,1167-1169, 2011) (通信作者)
  17. Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)
  18. Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)
  19. Zhou P ,Yin M, Wan H J,Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters 94, 053510, 2009)
  20. Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, (Journal of Vacuum Science &Technology B, 27,1030-1034, 2009)(通信作者)
  21. Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)
  22. Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application (Journal of Vacuum Science & Technology B, 26,1030-1033, 2008)
  23. Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)
  24. Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters 90 (18): 183507, 2007) (通信作者)
  25. Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)
  26. Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)
  27. Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X,Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters 83 (19): 3876-3878, 2003)

 

 

合作者发表论文选录:

 

  1. Peng-Fei Wang*, Xi Lin, Lei Liu, Qing-Qing Sun, Peng Zhou, Xiao-Yong Liu, Wei Liu,Yi Gong and David Wei Zhang, A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation,(Science, SCI,影响因子31),341(6146),(2013),640-643.
  2. M. Wang, W. J. Luo, Y. L. Wang, L. M. Yang, W. Zhu, P. Zhou, J. H. Yang, X. G. Gong, Y. Y. Lin*, A Novel CuxSiyO Resistive Memory in Logic Technology with Excellent Data,( 2010 Symposia on VLSI Technology and Circuits, Honolulu, USA)
  3. Hangbing Lv, Ming Wang, Haijun Wan, Yali Song, Wenjing Luo, Peng Zhou, Tingao Tang, Yinyin Lin*, R.Huang, S.Song, J. G.Wu, H. M. Wu, M. H. Chi, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, (Applied Physics Letters, 94(21), (2009),213502(1-3)).
 
 
 
 

 

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