林殷茵

复旦大学微电子学院教授
电话:13916126363
E-mail: yylin@fudan.edu.cn

 

主要经历:
2006年4月-至今:复旦大学教授
2002年4月-2006年3月:复旦大学副教授
1999年1月-2002年3月:复旦大学讲师
1995年3月-1998年12月:西安交通大学 微电子学与固体电子学 博士;
1992年9月-1995年2月:西安电子科技大学 微电子学与固体电子学 硕士;
1988年9月-1992年7月:西安电子科技大学 微电子学与固体电子学 本科。

研究方向:半导体存储器及其应用
半导体存储器电路设计与测试研究;
半导体存储器器件与工艺制造研究;
计算机及可移动设备存储体系结构研究;
工艺波动的电路表征。

荣誉和奖励:
1. 上海市优秀学科带头人
2. 上海市第七界十大IT科技新锐
3. 复旦大学优秀研究生导师

学术任职:
-Consultant of SMIC corp. and Huawei corp.
-TC (technical committee) of ISCAS (International Symposium of circuit and system)
-TPC(Technical programm committee) of ASICON 2015/2013/2009 ( IEEE International Conference on ASIC )
-TPC of ICSICT 2016/2014/2010 (IEEE International Conference on Solid-State and Integrated Circuit Technology)
-Invited talk of ISCAS2015 ( IEEE International Symposium on Circuits and Systems)
-Invited talk of IMW2010(IEEE International Memory Workshop)
-Co-chair of IMW2010
-ISOS/IWIDS 2008
-Reviewer of JSSC (Journal of Solid State and Circuit), EDL, Solid state circuit, etc.

项目情况:
·国家863重点项目,基于标准逻辑的阻变存储关键技术研究,企业合作;
·国家863重点项目,电阻随机存储器的嵌入式应用,企业合作;
·国家863重点项目,电阻随机存储器关键技术,企业合作;
·十二五重大专项,PVTA波动电路表征和监测技术研究,企业合作;
·十二五重大专项,efuse关键技术研究,企业合作;
·国际合作项目,面向节约目标的NAND自适应在线管理应用方案;
·国际合作项目,新型存储器在存储体系结构中的应用;
·企业合作项目,阻变存储器在嵌入式信息安全系统中的应用;
·企业合作项目,嵌入式动态随机存储器关键技术研究,;
·企业合作项目,高速低功耗混合存储架构设计;
·企业合作项目:Domain Wall memory架构和电路及集成研究;
·三星全球基金,TByte高密度阻变存储器关键技术研究;
·国际合作项目,STT-MRAM可靠性研究;
·企业合作项目,面向无线通讯应用的低功耗SRAM电路设计和测试技术研究。

代表性论文:
近年来在国际著名杂志和会议上,如JSSC2013, VLSI Symposium 2010/2012/2013/2014, ISCAS(3篇),EDL(9篇)、IMW(6篇)等,共发表相关文章125篇,被SCI/SCIE收录的97篇。作为第一发明人授权的相关发明专利60余项。部分文章如下:

1. Yinyin Lin, Xinyi Hu, Jianguo Yang, Xiaoyong Xue.A Compact Pico-second In-situ Sensor UsingProgrammable Ring Oscillators for Advanced On Chip Variation Characterization in 28nm HKMG. ISCAS 2016, pp.13.
2. Yanqing Zhao, Jaehwang Sim, Juan Xu, Jianguo Yang, Xiaoyong Xue, Yinyin Lin.Novel 3D Horizontal RRAM Architecture with Isolation Cell Structure for Sneak Current Depression. ISCAS 2016, pp. 2807
3. Yufeng Xie, Xiaoyong Xue, Yinyin Lin, etal. A Logic Resistive Memory Chip for Embedded Keys Storage with Physical Security. IEEE Transaction on System and Circuit II, 2015
4. Y. Y. Lin, X. Y. Xue etal, 3D Vertical RRAM Architecture and Operation Algorithms with Effective IR-Drop Suppressing and Anti-Disturbance, ISCAS 2015, invited talk,pp.377.
5. Y. Meng, X. Y. Xue, Y. L. Song, Y. Y. Lin etal., Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement, VLSI Technology Symposium, pp.198-199, 2014.
6. Y. L. Song, Y. Meng, X. Y. Xue, F. J. Xiao, Y. Liu, B. A. Chen, Y. Y. Lin etal., Reliability Significant Improvement of Resistive Switching Memory by Dynamic Self-adaptive Write Method, VLSI Technology Symposium, pp.102-103, 2013.
7. Xue, X.Y., Jian, W.X., Yang, J.G., Xiao, F.J., Chen, G., Xu, X.L., Xie, Y.F., Lin Y.Y. etal., A 0.13 μm 8 Mb Logic-Based CuxSiyO ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction, IEEE Journal of Solid-State Circuits, vol.48, no.5, 2013.
8. Xue, X.Y., Meng, C., Dong, C.L., Chen, B., Lin Y.Y. etal., A logic-based embedded DRAM with novel cell structure and dynamically adaptive refresh for long data retention, zero data availability penalty and high yield, International Memory Workshop, pp. 132-134, 2013.
9. Xue, X.Y., Jian, W.X., Yang, J.G., Xiao, F.J., Chen, G., Xu, X.L., Xie, Y.F., Lin Y.Y. etal., A 0.13μm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction,VLSI Circuit Symposium, pp.42-43, 2012.
10. Wang, Y.-L., Song, Y.-L., Yang, L.-M., Lin Y.Y. etal., Algorithm-Enhanced Retention Based on Megabit CuxSiyO Array of RRAM, IEEE Electronic Device Letters, vol.33 , Issue.10 ,pp.1408-1410, 2012.
11. Yang L.M. ,Song, Y.L., Liu Y., Wang Y.L., Tian X.P. , Wang M., Lin Y.Y. etal., Linear Scaling of Reset Current Down to 22-nm Node for a Novel CuxSiyO RRAM, IEEE Electronic Device Letters, vol.33, no.1, pp.89-91, 2012.
12. Song Y. L., Liu Y., Wang Y. L., Wang M., Tian X. P., Yang L. M., Lin Y.Y. etal., Low Reset Current in Stacked AlOx/WOy Resistive Switching Memory, IEEE Electronic Device Letters, vol.32, no.10, pp: 1439-1441, 2011.
13. Yanliang Wang, Lingming Yang, Ming Wang, Wenjin Luo, Beiyuan Hu, Yinyin Lin etal., Logic-based mega-bit CuxSiyO emRRAM with excellent scalability down to 22nm node for post-emFLASH SOC era, International Memory Workshop, pp.97-98, 2011.
14. Wang M., Luo W.J., Wang Y.L., Yang L.M., Zhu W., Zhou P., Yang J.H., Gong X.G., Lin Y.Y. etal., A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications, VLSI Technology Symposiums, pp.89-90, 2010.
15. Wang M., Song Y.L., Wan H.J., Lv H.B., Zhou P., Tang T.A., Lin Y.Y. etal., A CuO-based resistive memory with low power and high reliability SOC nonvolatile memory application,International Memory Workshop,2010.
16. Wan H. J., Zhou P., Ye L., Lin Y. Y. etal., In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching, IEEE Electronic Device Letters, vol.31, no.3, pp. 246-248, 2010.
17. Zhang Ji, Ding Yiqing, Xue Xiaoyong, Jin Gang, Wu Yuxin, Xie Yufeng, Lin Yinyin etal., A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell, IEICE Transactions on Electronics, vol.E93C, no. 12, pp.1692-1699 , 2010.
18. Wan H. J., Zhou P., Ye L., Lin Y. Y. etal.,Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability,Journal Of Vacuum Science&Technology B,vol.27,no.6,pp. 2468-2471,2009.
19. Zhou P., Wan H. J., Song Y. L., Yin M., Lv, Lv H. B., Lin Y. Y. etal.,A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and. Excellent Thermal Stability,2009 IEEE International Memory Workshop, pp.11-12,2009.
20. Zhou P., Yin M., Wan H. J., Lu H. B., Tang T. A., Lin, Y. Y. etal., Role of TaON interface for CuxO resistive switching memory based on a combine model, Applied Physics Letters,vol.94,no.5, 2009.
21. Lv Hangbing, Wang Ming, Wan Haijun, Song Yali, Luo Wenjing, Zhou Peng,Tang Tingao, Lin Yinyin etal.,Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode ,Applied Physics Letters, vol.94,no.21, 2009.
22. Tang Li, Zhou Peng, Wan Haijun, Jin Gang, Chen B. A.,Tang Ting-ao, Lin Yinyin, etal. Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory,Journal Of Applied Physics,vol.105,no.6, 2009.
23. Yin M., Zhou P., Lv, Lv H. B., Xu J., Song Y. L., Fu X. F., Tang T. A., Chen B. A., Lin Y. Y.,Improvement of resistive switching in CuxO using new RESET mode ,IEEE Electron Device Letters,vol.29,no.7,pp.681-683,2008.
24. Lv H. B., Yin M., Zhou, P.,Tang T. A., Chen, B. A., Lin Y. Y. etal., Improvement of endurance and switching stability of forming-free CuxO RRAM ,2008 NVSMW,pp.52-53,2008.
25. Zhou P., Lv,Lv, H. B., Yin M., Tang L., Song Y. L.,Tang T. A., Lin, Y.Y. etal.,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application,Journal Of Vacuum Science & Technology B, vol.26,no.3,pp.1030-1032,2008.
26. Zhang Yin, Feng Jie, Zhang Zufa, Cai Bingchu, Lin Yinyin etal. ,Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory,Applied Surface Science,vol.254,no.17,pp.5602-5606,2008.
27. Lv H. B., Yin M., Fu X. F., Song Y. L., Tang, L., Zhou P., Zhao C. H.,Tang T. A.,Chen B. A., Lin Y. Y.,Resistive memory switching of CuxO films for a nonvolatile memory application,IEEE Electron Device Letters,vol.29,no.4, pp.309-311,2008.
28. Lv H. B., Yin M., Song Y. L.,Fu X. F., Tang L., Zhou P., Zhao C. H., Tang T. A., Chen B. A.,Lin Y. Y.,Forming process investigation of CuxO memory films ,IEEE Electron Device Letters,vol.29,no.1,pp.47-49,2008.
29. Lin Y.Y., Lv H.B., Zhou P., Yin M., Liao F.F., Cai Y.F., Tang T.A., Feng J., Zhang Y., Zhang Z.F., Qiao B.W., Lai Y.F., Cai B.C.,Chen B.,Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current,2007 NVSMW,pp.61 - 62,2007.
30. Zhou P.,Shin Y. C., Choi B. J., Choi S.,Hwang C. S., Lin Y. Y. etal.,Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe ,Electrochemical And Solid State Letters, vol.10,no.9,pp.H281-H283 ,2007.
31. Feng J., Zhang Z. F., Zhang Y., Cai B. C.,Lin Y. Y. etal., Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory ,Journal Of Applied Physics,vol.101,no.7, 2007.
32. Hong Yang, Lin Yinyin, Tan Ting-Ao, Chen Bomy,Multilevel storage in phase-change memory ,IEICE Transactions On Electronics,vol.E90C,no.3, pp.634-640,2007.
33. Wu X., Zhou P., Li J., Chen L. Y., Lin H. B. Lv Y. Y., Tang T. A.,Reproducible unipolar resistance switching in stoichiometric ZrO2 films,Applied Physics Letters,vol.90,no.18, 183507, 2007.
34. Lv Hangbing, Zhou Peng, Lin Yinyin etal., Electronic properties of GST for non-volatile memory,Microelectronics Journal,vol.37,no.9,pp.982-984,2006.
35. Lv Hangbing, Lin Yinyin etal.,A nano-scale-sized 3D element for phase change memories,Semiconductor Science And Technology,vol.21,no.8,pp.1013-1017, 2006.

 

 

 
 
 
 

 

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