蒋玉龙

复旦大学微电子学院教授、博士生导师
电话:021-6564-3768
E-mail:yljiang@fudan.edu.cn

 

主要经历:
1995年9月-1999年6月:理学学士,物理学,复旦大学
1999年9月-2002年6月:理学硕士,微电子学与固体电子学,复旦大学
2002年9月-2005年6月:理学博士,微电子学与固体电子学,复旦大学
2005年7月-2006年3月:助理教授,微电子学院,复旦大学
2006年4月-2011年3月:副教授,微电子学院,复旦大学
2011年4月-现在:教授,微电子学院,复旦大学
2013年12月-现在:副主任,复旦大学教师教学发展中心

研究方向:
1. 纳米尺度CMOS器件与工艺
2. 新型半导体器件与制程
3. 柔性器件与工艺
4. 功率器件与工艺

荣誉和奖励:
1. 2009年1月,上海:信息学院三等奖教金
2. 2010年1月,上海:信息学院二等奖教金
3. 2010年6月,上海:复旦大学教学成果奖一等奖,第一获奖人
4. 2011年1月,上海:复旦微电子研究院先进个人
5. 2013年1月,上海:信息学院二等奖教金
6. 2014年6月,上海:上海市教学成果奖二等奖
7. 2016年1月,上海:复旦大学教学贡献奖

学术任职:
1. 执行/程序委员会主席,International Workshop on Junction Technologies (IWJT),2006-2016;
2. 信息委员会主席,IEEE International Nano-Electronics Conference (IEEE INEC)-2010
3. 程序委员会主席/大会秘书长,IEEE International Conference on Solid-state & Integrated Circuits Technologies (ICSICT),2010,2012,2016
4. 支会主席,IEEE EDS Shanghai Chapter (2011.1-现在)

代表性论文:
1. Ling-Ling Wang, Wu Peng, Yu-Long Jiang*, Bing-Zong Li, “A Modified1/f Noise Model for MOSFETs with Ultra-thin Gate Oxide”, IEEE Electron Dev. Lett., 37(5), pp.537-540, 2016.
2. Jian-Chi Zhang, Yu-Long Jiang*, Bing-Zong Li, “Thermal Stability Improvement Induced by Laser Annealing For 50-Å Ni(Pt) Film Silicidation”, IEEE Trans. Electron Dev., 63(2), pp. 751-754, 2016.
3. Jing-Hang Hu, Jian-chi Zhang, Zong-Yuan Fu, Jun-hui Weng, Wei-Bo Chen, Shi-Jin Ding*, Yu-Long Jiang*, and Guo-dong Zhu*, “Fabrication of Electrically Bistable Organic Semiconducting/ Ferroelectric Blend Films by Temperature Controlled Spin Coating”, ACS Appl. Mater. Interfaces, 7, 6325-6330, 2015.
4. Zong-Yuan Fu, Jian-Chi Zhang, Jing-Hang Hu, Yu-Long Jiang*, Shi-Jin Ding*, and Guo-Dong Zhu*, “Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors”, Chin. Phys. B, 24(5),p. 058502-1-9, 2015.
5. Zong-Yuan Fu, Jian-Chi Zhang, Jun-Hui Weng, Wei-Bo Chen, Yu-Long Jiang*, Shi-Jin Ding*, and Guo-Dong Zhu*, “Piezoresponse Force Microscopy Study on Ferroelectric Polarization of Ferroelectric Polymer Thin Films with Various Structural Configurations. ”AIP Advances, 5, p. 097211, 2015.
6. Ling-Ling Wang, Wu Peng, Yu-Long Jiang*, Bing-Zong Li, “Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode”, IEEE Electron Dev. Lett., 36(6), pp. 597-599, 2015.
7. Jing-hang Hu, Jian-Chi Zhang, Zong-Yuan Fu, Yu-Long Jiang*, Shi-Jin Ding*, Guo-Dong Zhu*, “Solvent Vapor Annealing of Ferroelectric P(VDF-TrFE) Thin Films,” ACS Appl. Mater. Interfaces, 6(20), p. 18312, 2014.
8. Rong-Hong Chen, Yu-Long Jiang*, and Bing-Zong Li, “Influenceof Post-annealing on Resistivity of VOx Thin Film”, IEEE Electron Dev. Lett., 35(7), pp. 780-782, 2014.
9. Jian-chi Zhang, Yu-Long Jiang*, Guo-Dong Zhu, Guo-Ping Ru, and Bing-Zong Li, “DirectObservation of Dipole Influence Induced by a SpinCoated Organic InterfacialLayer on Effective Schottky Barrier Height Modulationof Hg/Si Contact”, IEEE Electron Dev. Lett., 35(2), pp. 262-264, 2014.
10. Long Li, Yu-Long Jiang*, and Bing-Zong Li, “Ultrathin Ni(Pt)Si Film Formation Induced by LaserAnnealing”, IEEE Electron Dev. Lett., 34(7), pp. 912-914, 2013.
11. Shao-Song Fu, Hao Yu, Yu-Long Jiang*, and Guo-Dong Zhu, “Ultraviolet irradiation induced polarizationrestoration in electricallyfatigued ferroelectric polymer films”, J. Appl. Phys., 113, p. 114102, 2013.
12. Hao Yu, Qi Xie, Yu-Long Jiang*, Davy Deduytsche, and Christophe Detavernier, “Fermi Level DepinningFailure for Al/GeO2/GeContacts”, ECS Solid State Lett., 1(5), pp. 79-81, 2012.
13. Yu-Long Jiang*, Qi Xie, Xing-Ping Qu, David Wei Zhang, Davy Deduytsche, and Christophe Detavernier, “TaN/Ta as an Effective Diffusion Barrier forDirectContact of Copper and NiSi”, Electrochem. Solid-State. Lett., 1(1), pp. H9-H13, 2012.
14. Shao-Song Fu, Hao Yu, Xiao-Ya Luo, Yu-Long Jiang*, and Guo-Dong Zhu, “TheInfluence of Ultraviolet Irradiation on PolarizationFatigue in FerroelectricPolymer Films”, IEEE Electron Dev. Lett., 33(1), pp. 95-97, 2012.
15. Yu-Long Jiang*, Qi Xie, Xing-Ping Qu, Guo-Ping Ru, David Wei Zhang, Davy Deduytsche, and Christophe Detavernier, “Effective SchottkyBarrier Height Modulationby an Ultrathin Passivation Layer of GeOxNyforAl/n-Ge(100) Contact”, Electrochem. Solid-State. Lett.,14(12), pp. H487-H490, 2011.
16. Guo-Dong Zhu, Yan Gu, Hao Yu, Shao-Song Fu, and Yu-Long Jiang*, “Polarizationfatigue in ferroelectric vinylidenefluorideandtrifluoroethylene copolymerthin films”, J. Appl. Phys., 110, p. 024109, 2011.
17. Quan-Li Li, Qi Xie, Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, David Wei Zhang, Davy Deduytsche, and Christophe Detavernier, “Annealinginducedhysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor”, Semicond. Sci. Technol., 26 , p. 125003, 2011.
18. Xiao Guo, Hao Yu, Yu-Long Jiang*, Guo-Ping Ru, David Wei Zhang, and Bing-Zong Li, “Study ofnickel silicide formation on Si(110) substrate”, App. Surf. Sci., 257, pp. 10571– 10575, 2011.
19. Xiao-Rong Wang, Yu-Long Jiang*, Qi Xie, Christophe Detavernier, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li, “Annealingeffect on the metalgate effective work function modulation for the Al/TiN/SiO2/p-Sistructure”, Microelectron. Eng., 88, p. 573, 2011.
20. Yu-Long Jiang, Xing-Ping Qu*, Guo-Ping Ru, and Bing-Zong Li, “Schottkybarrierheight lowering induced by CoSi2 nanostructure”, Appl. Phys. A., 99 , pp. 93–98, 2010.
21. Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, “X-rayphotoelectron spectroscopy studyofNiSi formation on shallow junctions”, Appl. Surf. Sci., 256, pp. 698–701, 2009.
22. Yu-Fei Huang, Yu-Long Jiang*, Guo-Ping Ru, and Bing-Zong Li, “Study ofNi/Si(1 0 0) solid-state reaction with Aladdition”, Appl. Surf. Sci., 254 , pp. 5631–5634, 2008.
23. Yu-Fei Huang, Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li, “Study ofNi/Si(100) solid-state reaction with Yaddition”, Microelectron. Eng., 85, pp. 2013-2015, 2008.
24. Jia Luo, Yu-Long Jiang*, Guo-Ping Ru, Bing-Zong Li, and Paul KChu, “Silicidationof Ni(Yb) Film onSi(001)”, J. Electron. Material., 37, pp. 245-248, 2008.
25. Yu-Long Jiang*, Qi Xie, Christophe Detavernier, R. L. VanMeirhaeghe, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, PaulK Chu, “Growthof Pinhole FreeYtterbium Silicide Film by Solid-State Reaction on Si(001) with a ThinAmorphous Si Interlayer”, J. Appl. Phys., 102, p. 033508, 2007.
26. Yu-Long Jiang*, Jia Luo, Ye Yao, Fang Lu, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li, “Schottkycontact barrier heightextraction by admittance measurement”, J. Appl. Phys., 101, p. 053705, 2007.
27. Yu-Long Jiang*, Qi Xie, C. Detavernier, R. L. Van Meirhaeghe, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, An-PingHuang, and PaulK Chu, “Oxidationsuppression in ytterbium silicidation by Ti/TiN bi-capping layer”, J. Vac. Sci.Technol. A, 25, pp. 285-289, 2007.
28. Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, C. Detavernier, R. L. Van Meirhaeghe, “Lineargrowth of Ni2Si thin film on n+/p junction at lowtemperature”, J. Mater. Res., 21, pp. 3017-3021, 2006.
29. Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, AdityaAgarwal, John Poate, KhalidHossain, and Wayne Holland, “Arsenicredistributioninduced by low temperature Ni silicidation at 450oConshallow junctions”, J. Electron. Material.,35,pp. 937-940, 2006.
30. Yu-Long Jiang*, AdityaAgarwal, Guo-Ping Ru, GaryCai, and Bing-Zong Li, “Nickelsilicide formation on shallowjunctions”, Nucl. Instr. and Meth. Phys. Res. B, 237, pp. 160-166, 2005.
31. Yu-Long Jiang*, Guo-Ping Ru, Wei Huang, Xing-Ping Qu, AdityaAgarwal, YongLiu, Bing-Zong Li, AdityaAgarwal, GaryCai, John Poate, C. Detavernier, and R. L. Van Meirhaeghe, “Electricalcharacterization of NiSi/Si interfaces formed by a single and atwo-step rapidthermalsilicidation”, Semicond. Sci. Technol., 20, pp. 716-719, 2005.
32. Yu-Long Jiang*, Guo-Ping Ru, Jian-Hai Liu, Xing-Ping Qu, and Bing-Zong Li, “Thereaction characteristics ofultra thin Ni film on undoped and doped Si (100)”, J. Electron. Material,33, pp. 770-773, 2004.
33. Yu-Long Jiang, AdityaAgarwal, Guo-Ping Ru*, Xing-Ping Qu, JohnPoate, Bing-Zong Li, and WayneHolland, “Nickelsilicidationonn and p-type junctions at 300oC”, Appl. Phys. Lett., 85, pp. 410-412, 2004.
34. Yu-Long Jiang, Guo-Ping Ru*, Fang Lu, Xing-Ping Qu, Bing-Zong Li, and Shi-Ning Yang, “Ni/Si solidphase reaction studied bytemperature-dependent current-voltage technique”, J. Appl. Phys., 93, pp. 866-870, 2003.
35. Yu-Long Jiang*, “Schottkybarrierheight modulation for advanced source/drain contact”, Proceedingsof 19th Asia-Pacificworkshop on fundamentalsand applications of advanced semiconductor devices(2011年6月, 韩国大田)pp. 66-70. (Invited)
36. Yu-Long Jiang*, Guo-Ping Ru, Xing-Ping Qu, Bing-Zong Li, “Oxidation SuppressionforYbSi2-x Formation and New Method to ExtractSchottky Barrier Heightby Admittance Measurement”, Extented Abstracts of the 7thInternational Workshop on JunctionTechnology (IWJT2007) (2007年6月, 日本京都)pp. 93-98.(Invited)

 
 
 
 

 

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