陈琳,男,博士,副研究员。2012年7月获复旦大学微电子学与固体电子学专业理学博士学位。2010年7-10月在德国弗劳恩霍夫研究所任访问学者。2012年7月2014年8月,荷兰皇家飞利浦公司担任研发项目经理,高级研发工程师。2014年10月作为人才引进加入复旦大学微电子学院从事科研与教学工作。作为骨干成员参与国家02重大专项、国家自然科学基金、上海市科委重点项目。在国际主流学术期刊IEEE Electron Device Letters,Scientific Reports, Applied Physics Letters等发论文30余篇。

 

主要研究方向:
1) 集成电路领域新原理器件与新工艺研究;
2) 下一代非挥发存储器件与工艺技术开发;
3) 纳米CMOS器件先进栅介质与原子层化学气相淀积(ALD)技术。

 

联系方式
通信地址:
 上海市邯郸路220号复旦大学微电子学楼307室  200433
电子邮箱:linchen@fudan.edu.cn

电话:+86-21-65643150
欢迎微电子、物理、材料、化学等专业的优秀毕业生加入。

 

代表性论文:

  1. Ya-Wei Dai, Lin Chen (陈琳)*, Wen Yang, Qing-Qing Sun*, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang and Fei Xiao, Complementary Resistive Switching in Flexible RRAM Devices. IEEE Electron Device Lett.35 (2014) 915 . (通信作者)
  2. Lin Chen (陈琳), Ya-Wei Dai, Qing-Qing Sun , Jiao-Jiao Guo, Peng Zhou, David Wei Zhang, Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages, Solid State Ionics. (2014) doi:10.1016/j.ssi.2014.08.014. (第一作者)
  3. Peng Zhou, Song-bo Yang, Qing-Qing Sun, Lin Chen (陈琳), Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Direct Deposition of Uniform High-kappa Dielectrics on Graphene, Scientific Report, 4 (2014) 6448. (共同第一作者)
  4. Xu-Dong Chen, Lin Chen (陈琳)*, Qing-Qing Sun, Peng Zhou and David Wei Zhang, Hybrid density functional theory study of Cu(In1-xGax)Se2 band structure for solar cell application. AIP ADVANCES,4(2014)087118. (通信作者)
  5. Song-bo Yang, Peng Zhou, Lin Chen (陈琳), Qing-Qing Sun, , Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, JOURNAL OF MATERIALS CHEMISTRY C, 2(2014) 8042.
  6. Shan Zheng,Wen Yang, Qing-Qing Sun, Lin Chen (陈琳)*, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang and Fei Xiao, Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics, Appl. Phys. Lett. 103, (2013) 261602. (通信作者)
  7. Lin Chen (陈琳), Wen Yang, Ye Li, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application, J. Vac. Sci. Technol. A 30(1), Feb 2012. (第一作者)
  8. Lin Chen (陈琳), Hong-Yan Gou, Qing-Qing Sun, Hong-Liang Lu, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang, Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM with Embedded Ruthenium Nanocrystals, IEEE Electron Device Lett.32 (2011) 749 . (第一作者)
  9. Lin Chen (陈琳), Yan Xu, Qing-Qing Sun, Han Liu, Jing-Jing Gu, Shi-Jin Ding, David Wei Zhang, Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM,IEEE Electron Device Lett. 31 (2010) 356. (第一作者)
  10. Lin Chen (陈琳), Yan Xu, Qing-Qing Sun, Peng. Zhou, Jing-Jing Gu, Shi-Jin Ding, David Wei Zhang, Atomic Layer Deposited HfLaO Based Resistive Switching Memories With Superior Performance, IEEE Electron Device Lett. 31 (2010) 1296. (第一作者)
  11. Lin Chen (陈琳), Qing-Qing Sun, Jing-Jing Gu, Yan Xu, Shi-Jin Ding and David Wei Zhang, Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application, Current Applied Physics, Volume 11, Issue 3, May 2011, 849-852. (第一作者)
  12. Qing-Qing Sun, Jing-Jing Gu, Lin Chen (陈琳), P. Zhou, Shi-Jin Ding, D.W. Zhang,Controllable Filament with Electric Field Engineering for Resistive Switching Uniformity, IEEE Electron Device Lett.. 32 (2011) 1167.
  13. Y. Xu, Lin. Chen (陈琳), Qing-Qing Sun, H. Liu, J.-J. Gu, S.-J. Ding, D.W. Zhang, Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition, Solid State Communications. 150 (2010)1690.
  14. H. Liu, Lin. Chen (陈琳), Qing-Qing Sun, J.-J. Gu, S.-J. Ding, D.W. Zhang ,Band Structures of Metal-Oxide Capped Graphene: A First Principles Study. Chinese Physics Letters, 7 (2010) 077201.
  15. Yan Xu, Lin Chen (陈琳), Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang,Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al2O3 and AlN, Thin Solid Films, 519 (2011) 6000.
  16. Jian-Shuang Liu, Yang Geng, Lin Chen (陈琳), Qing-Qing Sun,Peng Zhou Hong-Liang Lu, David Wei Zhang, Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing. Thin Solid Films 529 (2013) 230-233.
  17. Wen Yang, Qing-Qing Sun,RC Fang, Lin Chen (陈琳), P. Zhou, S.-J. Ding, D.W. Zhang The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization.Current Applied Physics, Volume 12, Issue 6, Nov 2012, 1445-1447.
  18. Yong-Jun Li, Qing-Qing Sun, Lin Chen (陈琳), P. Zhou, PF Wang, S.-J. Ding, D.W. Zhang Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology. AIP ADVANCES, Volume 2, Issue 1,MAR 2012, 012191.

 

出版著作

1 Peng Zhou, Lin Chen (陈琳)Hangbing LvHaijun WanQingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’Taylor & Francis GroupISBN:978-1-4398-4835-7201120千字。

 

 
 
 
 

 

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